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DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Features
* * * * * * * * *
Rev 01-Sep-10
Highly Integrated Core Chip Transmit and Receive Modes of Operation Integrated T/R Switches, LNA and Driver Amplifier 6-Bit Phase Shifter and 6-Bit Attenuator 33.0 dB Small Signal RX Gain +20 dBm TX P1dB Compression Point Compensated On-Chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
XZ1001-BD
General Description
The XZ1001-BD is a highly integrated transmit/receive 4 port core chip. It is designed for applications operating within the 2.5 to 4 GHz range. The core consists of integrated transmit/receive switches, LNA, 6-bit phase shifter, 6-bit attenuator and driver amplifier. The digital control logic allows fast phase shifter and attenuator changes. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for phased array radar applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Gate Supply (Vs) Logic Supply (Vl) Supply Current (Id) Input Power Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature 8V TBD 5V 676 mA TBD -65 to +165 C -55 to MTTF TBD
Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T=25 oC)
Parameter Frequency Range (f) Input Return Loss RX/TX Mode (S11) Output Return Loss RX/TX Mode (S22) Receive/Transmit Small Signal Gain (S21) Receive/Transmit Output Power for 1 dB Compression Point Receive Noise Figure (NF) Receive Output Third Order Intercept (OIP3) Phase Shifter Range (6 Bit, 64 states, 5.625 deg step) Phase Shifter RMS Phase Error Phase Shifter RMS Amplitude Error Attenuator Range (6 Bit, 64 states, 0.45 dB step) Attenuator RMS Amplitude Error Attenuator RMS Phase Error Drain Bias Voltage (Vd1,2) Drain Bias Voltage (Vd3) Gate Bias Voltage (Vs1,2) Control Voltage High (I1A,2,3,4,5,56) & (I1P2,3,4,5,6) Control Voltage Low (I1A,2,3,4,5,56) & (I1P2,3,4,5,6) Supply Current (Id1) [Vs(1,2)=-10V, VD(1,2)=5V, VD3=7V] Supply Current (Id2) [Vs(1,2)=-10V, VD(1,2)=5V, VD3=7V] Supply Current (Id3) [Vs(1,2)=-10V, VD(1,2)=5V, VD3=7V]
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
Units GHz dB dB dB dBm dB dBm deg deg dB dB dB deg VDC VDC VDC VDC VDC mA mA mA
Min. 2.5
Typ. -10 -15 33 20 2.5 TBD
Max. 4
0 1.5 0.7 0 0.3 1.5 5 7 -10 +3.3 22 60 270
354.375
28.35
0.5 +2.0 0.0
+5.0 +0.8
Page 1 of 11
3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Typical Performance
S11 in Transmit mode, reference state Vs(1,2)=-10V, Vd(1,2)=5V and Vd3=7V S12 in Transmit mode, reference state Vs(1,2)=-10V, Vd(1,2)=5V and Vd3=7V
Rev 01-Sep-10
0 -2
0 -10
S11 (dB)
-6 -8 -10 10 -12 -14 -16 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
S12 (dB)
-4
-20 -30 -40 -50 50 -60 -70 -80 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
Frequency (GHz)
0 -5
S22 in Transmit mode, reference state Vs(1,2)=-10V, Vd(1,2)=5V and Vd3=7V
40 35 30
S21 in Transmit mode, reference state Vs(1,2)= -10V, Vd(1,2)= 5V and Vd3= 7V
S21 (dB)
S22 (dB)
-10 -15 -20 -25 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
25 20 15 10 5 0 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
Frequency (GHz)
30 25
Gate Bias currents Vs(1,2)= -10V, VD(1,2)= 5V and VD3= 7V
300 250
Drain Bias currents Vs(1,2)= -10V, VD(1,2)= 5V and VD3= 7V
Current (mA)
20 15 10 5 0 2.5 2.7 2.9 3.1 3.3 3.5 3.7
Current (mA)
IS1 IS2
200 150 100 50 0
ID1 ID2 ID3
3.9
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
Frequency (GHz)
Frequency (GHz)
Page 2 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Attenuator Measurements
The following bias conditions were used to test the attenuator: Vs(1,2)= -10V, Vd(1,2)=5V and Vd3=7V.
Attenuator Performance in Transmit Mode
RMS Amplitude Error (dB)
0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 05 0 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 -25 -30 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 0 -5 -10 -15 -20
Rev 01-Sep-10
Attenuator Performance in Transmit Mode
Frequency (GHz)
Attenuation (dB)
Frequency (GHz)
Maximum Attenuation Range (dB)
Attenuator Performance in Transmit Mode
RMS Phase Error (Degrees)
2.5 2 1.5 1 0.5 0 2 2.5 3 3.5 4 4.5
Attenuator Performance in Transmit Mode
-27.8 -28 -28.2 -28.4 -28.6 -28.8 -29 -29.2 -29.4 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
Frequency (GHz)
Page 3 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Phase Shifter Measurements
The following bias conditions were used to test the phase shifter: Vs(1,2)= -10V, Vd(1,2)=5V and Vd3=7V.
Phase shifter performance in transmit mode
RMS Phase Error (Degrees) )
4.0 3.5
Rev 01-Sep-10
Phase shifter performance in transmit mode
400
Phase shifter (Degrees)
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
350 300 250 200 150 100 50 0 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
3.0 2.5 2.0 1.5 1.0 0.5 0.0
Frequency (GHz)
Frequency (GHz)
Phase shifter performance in transmit mode
1.2
Phase shifter performance in transmit mode
Maximum Phase Range (Degrees)
364 362 360 358 356 354 352 350 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
RMS amplitude error (dB)
1 0.8 0.6 0.4 0.2 0 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
Frequency (GHz)
Page 4 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Power Measurements
24 22 20
Rev 01-Sep-10
Large Signal Gain in Transmit Mode Vs(1,2)=-10V, Vd(1,2)= 5V and Vd3=7V
Frequency GHz
24 22 20
Large Signal Gain in Receive Mode Vs(1,2)=-10V, Vd(1,2)= 5V and Vd3=7V
Frequency GHz
2.5GHz 2.75GHz 3GHz 3.25GHz 3.5GHz 3.75GHz 4GHz
Pout (dBm)
18 16 14 12 10 8 6 4 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
Pout (dBm)
2.5GHz 2.75GHz 3GHz 3.25GHz 3.5GHz 3.75GHz 4GHz
18 16 14 12 10 8 6 4 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
Pin (dBm)
Pin (dBm)
25 24 23
P1dB in Transmit Mode Vs(1,2)=-10V, Vd(1,2)= 5V and Vd3=7V
25 24 23
P1dB in Receive Mode Vs(1,2)=-10V, Vd(1,2)= 5V and Vd3=7V
P1dB (dBm)
P1dB (dBm)
22 21 20 19 18 17 16 15 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
22 21 20 19 18 17 16 15 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
Frequency (GHz)
NF vs. Frequency in Receive Mode Vs(1,2)= -10V, Vd(1,2,3)= 5V
5 4
NF (dB)
3 2 1 0 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
Page 5 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Core Chip Block Diagram
Rev 01-Sep-10
Page 6 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Rev 01-Sep-10
5430.0
5215.0 5015.0 4815.0 4615.0 4415.0 4215.0 4015.0 3815.0 3615.0 3415.0 3215.0 3015.0 2815.0 2615.0 2415.0 2215.0 2015.0 1815.0 1615.0 1415.0 1215.0 1015.0 815.0 615.0 415.0 215.0 0.0 0.0
3663.5
Mechanical Drawing
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
30 29
5430.0
4913.5
28 27
516.5
3663.5
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 12.4 mg.
5480.0
Page 7 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Bond Pad Designations
Pad # Pad ID 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VD3 GND VG2 V S2 GND I2S I6A I5A I4A I3A I2A I1A I6P I5P I4P Voltage [VDC] 0.5 - 7V -10V 0V - +3.3V 0 / +3.3 0 / +3.3 0 / +3.3 0 / +3.3 0 / +3.3 0 / +3.3 0 / +3 3 +3.3 0 / +3.3 0 / +3.3 Description Drain bias for MPA (stage 3) see App note [5] for more details Decoupling Ground Monitor pad for stage 3 gate bias voltage 2nd Gate bias s upply Decoupling Ground Deco pling Gro nd TX/RX Out switch 14.4 dB attenuation bit 7.2 dB attenuation bit 3.6 dB attenuation bit 1.8 dB attenuation bit 0.9 dB attenuation bit 0.45 dB attenuation bit 180 Ph bit Phase 90 Phase bit 45 Phase bit Pad # Pad ID 16 I3P Voltage [VDC] 0 / +3.3 0 / +3.3 0 / +3.3 0V - +3.3V -10V 10V 5V 5V RF RF RF RF 22.5 Phase bit 11.25 Phase bit 5.625 Phase bit TX/RX In switch supply LNA, s ppl for LNA 1st gate bias and digital Monitor pad for stage 1 & 2 gate bias voltages Decoupling Ground Drain bias for LNA 2nd stage Decoupling Ground Drain bias for LNA 1st stage Decoupling Ground Trans mit [TX] Input Receive R i [RX] I t Input Trans mit [TX] Output Receive [RX] Output Description
Rev 01-Sep-10
17 I2P 18 I1P 19 I1S 20 VS1 21 VG1 22 GND 23 VD2 24 GND 25 VD1 26 GND 27 TX-IN 28 RX IN RX-IN 29 TX-OUT 30 RX-OUT
App Note [1] Wire Bonding - Bond wires need to be as short as possible. The device is designed for a total bond wire inductance of 130 pH/RF bond pad. Different bond wire inductance will result in degraded performance See the diagram below for recommended bonding.
RF Transition Implementation
91 m
110 m
Page 8 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Rev 01-Sep-10
App Note [2] Biasing - The core chip can be operated in either Transmit [TX] or Receive [RX] mode. TX Mode - The TX mode is activated by setting the I1S and I2S switches, bond pads 6 and 19, to logic high (+3.3V). RX Mode - To select the RX mode of operation the I1S and I2S switches, bond pads 6 and 19, are set to logic low (0V). TX/RX Modes - For typical operation in either TX or RX mode, the gates (Vs 1,2) must be biased at -10V, the LNA/interstage amplifiers (Vd1,2) must be biased at 5V and the output power amplifier (MPA) must be set at +7V. CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vs 1,2) is available before applying the positive drain supply (Vd1,2,3). App Note [3] Attenuator / Phase Shifter Control Bias - Logic buffering is integrated in the device to supply the necessary internal switching voltages. The reference state is enabled with logic "low" on all inputs, and the binary weighted phase (amplitude) states are switched by a logic "high" on the respective control input. Amplitude (phase) variation between phase (amplitude) states is minimized by optimization of internal matching and isolation between bits. Each bit is controlled using a `0' for the reference state and a `1' for the enabled state.
Atten Level (dB) 0 0.45 0.9 1.8 3.6 7.2 14.4 28.35
I1A 0 1 0 0 0 0 0 1
I2A 0 0 1 0 0 0 0 1
I3A 0 0 0 1 0 0 0 1
I4A 0 0 0 0 1 0 0 1
I5A 0 0 0 0 0 1 0 1
I6A 0 0 0 0 0 0 1 1
Phase Shift (degrees) 0 5.625 11.25 22.5 45 90 180 354.375
I1P 0 1 0 0 0 0 0 1
I2P 0 0 1 0 0 0 0 1
I3P 0 0 0 1 0 0 0 1
I4P 0 0 0 0 1 0 0 1
I5P 0 0 0 0 0 1 0 1
I6P 0 0 0 0 0 0 1 1
Page 9 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Rev 01-Sep-10
App Note [4] Bias Arrangement - Each DC Bias pad (Vd1,2,3) needs to have DC bypass capacitance (80-120 pF) as close to the device as possible. Additional DC bypass capacitance (10 nF) is also recommended. App note [5] - The Pout and S21 of the XZ1001-BD can be adjusted depending on the biasing level of Vd3. The Pout of the XZ1001-BD is 22 dBm* and the S21 is 33 dB* when Vd3 is biased at 7V. The Pout and S21 can be reduced with lower biasing of Vd3 as illustrated in the plots below. This feature offers flexibility for the XZ1001-BD to suit applications with lower Pout and S21 specifications. *There is a plan to increase the Pout to 30 dBm and S21 to 40 dB in a future release of the XZ1001-BD.
30 25
Output power, in Transmit mode Vs(1,2)= -10V, Vd(1,2)=5V, Pin= -5dBm
Vd3= 7V Vd3= 6.5V Vd3= 6V
40 35 30
S21 in Transmit mode, reference state Vs(1,2)= -10V and Vd(1,2)=5V
Pout (dBm)
20 15 10 5 0 2.5 2.7 2.9 3.1
S21 (dB)
Vd3= 5.5V Vd3= 5V Vd3= 4.5V Vd3= 4V Vd3= 3.5V Vd3= 2.5V Vd3= 2V Vd3= 1.5V Vd3= 1V
25 20 15 10 5 0 2.5 2.7 2.9 3.1 3.3 3.5 3.7
Vd3= 7V Vd3= 5V Vd3= 1.5V Vd3 Vd3= 1V
3.9
Frequency (GHz)
3.3
3.5
3.7
3.9
Frequency (GHz)
Page 10 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1001-BD
2.5-4.0 GHz GaAs MMIC S-Band Core
Handling and Assembly Information
CAUTION! - M/A-COM Tech Asia MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - M/A-COM Tech Asia's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of M/A-COM Tech Asia. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in anti-static containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from M/A-COM Tech Asia are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the M/A-COM Tech Asia "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Rev 01-Sep-10
Ordering Information
Part Number for Ordering XZ1001-BD-000V XZ1001-BD-EV1
Description RoHS compliant die packed in vacuum release gel paks XZ1001-BD Evaluation Module
Appropriate precautions in handling, packaging and testing devices must be observed.
Caution: ESD Sensitive
Proper ESD procedures should be followed when handling this device.
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
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3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia

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